On the Energy Gaps Induced by a Semiconducting Substrate in the Graphene Density of States

Sergey Yurevich Davydov, Alexander Alexandrovich Lebedev

Abstract


The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or one gap, overlapping with the energy gap of substrate. The gaps width dependences on the coupling regimes (tight and weak) are obtained. Numerical estimations are fulfilled for the epitaxial graphene on 6H-SiC{0001}.


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DOI: http://dx.doi.org/10.5539/mas.v9n12p234

Modern Applied Science   ISSN 1913-1844 (Print)   ISSN 1913-1852 (Online)

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