Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell


  •  Djimba Niane    
  •  Mouhamadou M. Soce    
  •  Jean Jude Domingo    
  •  Ousmane Diagne    
  •  Moustapha Dieng    

Abstract

In this work, the heterojunction composed of a n-type ZnO transparent conductive oxide (OTC) layer, a n-type CdS buffer layer and a absorber layer based Cu (In, Ga)Se2 p doped is studied under the influence of a KF layer placed in the CIGS/CdS interface. This study was done by varying the thickness of KF using thin-film simulation software named SCAPS-1D. The presence of KF for a doping of the CIGS absorber of 1016cm-3 improves strongly the electrical parameters that are the Vco, the Jcc the FF, the maximum power and the conversion efficiency of the solar cell Ƞ. However, a decrease of the FF and the Jcc is noticed when the thickness of the KF is greater than 30nm causing a deterioration of the performances of the cell.



This work is licensed under a Creative Commons Attribution 4.0 License.
  • ISSN(Print): 1916-9639
  • ISSN(Online): 1916-9647
  • Started: 2009
  • Frequency: bimonthly

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