The Structure and Optical Performance of InGaN/GaN Multiple Quantum Wells Grown on C-plane Sapphire

Xiaolei Peng, Pingjuan Niu, Xiaoyun Li, Ke Ding, Caifeng Wang

Abstract


In this article, we study the structure and optical performance of penetration dislocation to the epitaxial GaN-base quantum well on C-plane sapphire. On the one hand, the penetration dislocation will make the interface of quantum wells disperse and largely fluctuate, and accordingly increase the localization effect of quantum wells. On the other hand, as the nonradiative recombination center, the penetration dislocation makes the radiation intensity of quantum wells to be reduced. The influence of penetration dislocation to the optical performance of InGaN/GaN multiple quantum wells decides the competition between both. In addition, the localization effect intensity of InGaN quantum wells possesses linear relation with the content of In in definite range of wavelength.

Full Text: PDF

Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.

Modern Applied Science   ISSN 1913-1844 (Print)   ISSN 1913-1852 (Online)

Copyright © Canadian Center of Science and Education

To make sure that you can receive messages from us, please add the 'ccsenet.org' domain to your e-mail 'safe list'. If you do not receive e-mail in your 'inbox', check your 'bulk mail' or 'junk mail' folders.