Effects of Mn Substitution on Magnetic and Electronic Properties of \beta-SiC Semiconductor

Morteza Izadifard, Mohammad Ebrahim Ghazi, Samira Hosaini

Abstract


Wide band gap semiconductors doped by transition metals are attracting much attention in part because of
possible ‘spintronics’ applications. Using pseudo-potential plane-wave calculations and density functional theory
(DFT), we studied effects of doping Mn of various concentrations on the cubic silicon carbide structure (?-SiC).
Band structures and density of states (DOSs) were calculated for ?-SiC and Si1-xMnxC (with x= 0.0313, 0.0625,
and 0.25). Analyses of the DOSs revealed that the diluted ferromagnetic semiconductor Si1-xMnxC, i.e. SiC with
Mn substituted for Si, should be a half-metal. Our results show spin polarization at Fermi energy (Ef), and a
stable ferromagnetic state for x= 0.0625.


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Applied Physics Research   ISSN 1916-9639 (Print)   ISSN 1916-9647 (Online)

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